ST has launched its fourth-generation STPOWER SiC MOSFETs, offering smaller size and greater efficiency for future EV traction inverters. Set to be available in 750-V and 1200-V classes, these devices ...

Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes ...

Toshiba has developed a 2,200 V silicon carbide (SiC) MOSFET for inverters and energy storage systems, in order to help inverter manufacturers to reduce the size and weight of their products. Japanese ...

SiC MOSFETs in solar and energy storage applications have clear benefits compared to silicon technologies, addressing the pressing need for energy and cost savings ...

CREE has developed a new MOSFET that could be suitable for silicon-carbide-based string inverters above 10 kW in size. The U.S. manufacturer says switching losses are 20% lower with the new transistor ...

Cree, Inc. and Delta Energy Systems announce a breakthrough in the photovoltaic (PV) inverter industry with the release of Delta's new generation of solar inverters, which utilize SiC power MOSFETs ...

A range of four H-bridge MOSFET packages aims to simplify DC fan and CCFL inverter circuits by reducing both component count and PCB size in space-constrained ...

An impressive peak efficiency of 99.1% is claimed for 50kW a solar inverter made with silicon carbide (SiC) mosfets and diodes from Cree, which claims it is “one-fifth the average size and weight of ...